NTMD6N04R2G ONSEMI
Виробник: ONSEMIDescription: ONSEMI - NTMD6N04R2G - NTMD6N04R2G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис NTMD6N04R2G ONSEMI
Description: MOSFET 2N-CH 40V 4.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.29W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 4.6A, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V, Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції NTMD6N04R2G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NTMD6N04R2G |
|
на замовлення 43 шт: термін постачання 14-28 дні (днів) |
|||
 |
NTMD6N04R2G | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 4.6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.29W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
|
|
|
NTMD6N04R2G | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 4.6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.29W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
|
 |
NTMD6N04R2G | Виробник : onsemi |
MOSFET NFET SO8 40V 5.8A 0.027R |
товару немає в наявності |