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NTMD6N04R2G

NTMD6N04R2-D.pdf
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термін постачання 14-28 дні (днів)
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Технічний опис NTMD6N04R2G

Description: MOSFET 2N-CH 40V 4.6A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V, Current - Continuous Drain (Id) @ 25°C: 4.6A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.29W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Інші пропозиції NTMD6N04R2G

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NTMD6N04R2G NTMD6N04R2G onsemi NTMD6N04R2-D.pdf Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTMD6N04R2G NTMD6N04R2G onsemi NTMD6N04R2-D.pdf Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
товару немає в наявності
В кошику  од. на суму  грн.
NTMD6N04R2G NTMD6N04R2G onsemi NTMD6N04R2_D-2318941.pdf MOSFET NFET SO8 40V 5.8A 0.027R
товару немає в наявності
В кошику  од. на суму  грн.
NTMD6N04R2G NTMD6N04R2-D.pdf
NTMD6N04R2G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NTMD6N04R2G NTMD6N04R2-D.pdf
NTMD6N04R2G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.29W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
товару немає в наявності
В кошику  од. на суму  грн.
NTMD6N04R2G NTMD6N04R2_D-2318941.pdf
NTMD6N04R2G
Виробник: onsemi
MOSFET NFET SO8 40V 5.8A 0.027R
товару немає в наявності
В кошику  од. на суму  грн.