NTMFD001N03P9 onsemi
Виробник: onsemiDescription: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 62.00 грн |
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Технічний опис NTMFD001N03P9 onsemi
Description: MOSFET 2N-CH 30V 11A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6).
Інші пропозиції NTMFD001N03P9 за ціною від 64.36 грн до 196.09 грн
| Фото | Назва | Виробник | Інформація |
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NTMFD001N03P9 | Виробник : onsemi |
MOSFETs Power Mosfet 30V POWERTRENCH Power Clip Power Mosfet 30V POWERTRENCH? Power Clip |
на замовлення 2947 шт: термін постачання 21-30 дні (днів) |
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NTMFD001N03P9 | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 11A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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