Технічний опис NTMFD4901NFT1G ON Semiconductor
Description: MOSFET 2N-CH 30V 10.3A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A, Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical).
Інші пропозиції NTMFD4901NFT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
NTMFD4901NFT1G Код товару: 91879 |
 Транзистори > Польові N-канальні |
товар відсутній
|
|||
 |
NTMFD4901NFT1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 13.5A/23.4A 8-Pin DFN EP T/R |
товар відсутній |
|
.JPG "NTMFD4901NFT1G") |
NTMFD4901NFT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 10.3A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W, 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
товар відсутній |