NTMFD4C20NT1G onsemi

Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V, Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.09W, 1.15W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).