NTMFD4C88NT3G ON Semiconductor

Description: MOSFET 2N-CH 30V 11.7A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A, Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V, Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6).