NTMFD5875NLT1G ON Semiconductor

Description: MOSFET 2N-CH 60V 7A/22A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 32W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V, Rds On (Max) @ Id, Vgs: 33mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual).