NTMFS008N12MCT1G onsemi

Description: SINGLE N-CHANNEL POWER MOSFET 12, Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 200µA, Power Dissipation (Max): 2.7W (Ta), 102W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).