Технічний опис NTMFS010N10GTWG ON Semiconductor
Description: 100V MVSOA IN PQFN56 PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 4V @ 164µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V.
Інші пропозиції NTMFS010N10GTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| NTMFS010N10GTWG | Виробник : ON Semiconductor |
 Power MOSFET, Single N-Channel |
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NTMFS010N10GTWG | Виробник : onsemi |
Description: 100V MVSOA IN PQFN56 PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 4V @ 164µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V |
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NTMFS010N10GTWG | Виробник : onsemi |
Description: 100V MVSOA IN PQFN56 PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 4V @ 164µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V |
товар відсутній |