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NTMFS0D6N04XMT1G

NTMFS0D6N04XMT1G onsemi

ntmfs0d6n04xm-d.pdf
Виробник: onsemi
MOSFETs 40V T10M IN S08FL HEFET GEN 2 PACKAGE
на замовлення 3627 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна
2+230.55 грн
10+146.38 грн
100+91.42 грн
500+75.95 грн
1000+71.03 грн
1500+65.90 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис NTMFS0D6N04XMT1G onsemi

Description: 40V T10M IN S08FL HEFET GEN 2 PA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 380A (Tc), Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 210µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V.

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NTMFS0D6N04XMT1G NTMFS0D6N04XMT1G onsemi ntmfs0d6n04xm-d.pdf Description: 40V T10M IN S08FL HEFET GEN 2 PA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NTMFS0D6N04XMT1G NTMFS0D6N04XMT1G onsemi ntmfs0d6n04xm-d.pdf Description: 40V T10M IN S08FL HEFET GEN 2 PA
Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
NTMFS0D6N04XMT1G ntmfs0d6n04xm-d.pdf
NTMFS0D6N04XMT1G
Виробник: onsemi
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
NTMFS0D6N04XMT1G ntmfs0d6n04xm-d.pdf
NTMFS0D6N04XMT1G
Виробник: onsemi
Description: 40V T10M IN S08FL HEFET GEN 2 PA
Input Capacitance (Ciss) (Max) @ Vds: 5574 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 86.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.