NTMFS4825NFET3G onsemi
Виробник: onsemiDescription: MOSFET N-CH 30V 17A/171A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 22A, 10V
Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 15 V
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Технічний опис NTMFS4825NFET3G onsemi
Description: MOSFET N-CH 30V 17A/171A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 22A, 10V, Power Dissipation (Max): 950mW (Ta), 96.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 15 V.
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NTMFS4825NFET3G | Виробник : onsemi |
Description: MOSFET N-CH 30V 17A/171A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 22A, 10V Power Dissipation (Max): 950mW (Ta), 96.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 15 V |
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