
NTMFS4846NT1G onsemi

Description: MOSFET N-CH 30V 12.7A/100A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V
на замовлення 45633 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
784+ | 28.88 грн |
Відгуки про товар
Написати відгук
Технічний опис NTMFS4846NT1G onsemi
Description: MOSFET N-CH 30V 12.7A/100A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Power Dissipation (Max): 890mW (Ta), 55.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V.
Інші пропозиції NTMFS4846NT1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
NTMFS4846NT1G | Виробник : ON |
![]() |
на замовлення 446 шт: термін постачання 14-28 дні (днів) |
||
NTMFS4846NT1G | Виробник : ON Semiconductor |
![]() |
на замовлення 809 шт: термін постачання 14-28 дні (днів) |
||
![]() |
NTMFS4846NT1G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V |
товару немає в наявності |
|
![]() |
NTMFS4846NT1G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 55.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 12 V |
товару немає в наявності |
|
![]() |
NTMFS4846NT1G | Виробник : onsemi |
![]() |
товару немає в наявності |