Технічний опис NTMFS4931NT3G ON Semiconductor
Description: MOSFET N-CH 30V 23A/246A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Інші пропозиції NTMFS4931NT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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NTMFS4931NT3G | onsemi |
 Description: MOSFET N-CH 30V 23A/246A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
NTMFS4931NT3G | onsemi |
Description: MOSFET N-CH 30V 23A/246A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTMFS4931NT3G | ON Semiconductor |
MOSFET NFET SO8FL 30V 236A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| NTMFS4931NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 23A/246A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 23A/246A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS4931NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 23A/246A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 23A/246A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS4931NT3G |
|
Виробник: ON Semiconductor
MOSFET NFET SO8FL 30V 236A
MOSFET NFET SO8FL 30V 236A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.