Технічний опис NTMFS4982NFT3G ON Semiconductor
Description: MOSFET N-CH 30V 26.5A/207A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V.
Інші пропозиції NTMFS4982NFT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NTMFS4982NFT3G | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 30V 36A 5-Pin(4+Tab) SO-FL T/R |
товару немає в наявності |
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NTMFS4982NFT3G | Виробник : onsemi |
Description: MOSFET N-CH 30V 26.5A/207A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V |
товару немає в наявності |