NTMFS4C08NT1G-001 onsemi

Description: MOSFET N-CH 30V 9A/52A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 760mW (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).