NTMFS4C09NBT1G onsemi

Description: MOSFET N-CH 30V SO8FL, Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V, Drain to Source Voltage (Vdss): 30 V, Part Status: Active, Power Dissipation (Max): 760mW (Ta), 25.5W (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc), Package / Case: 8-PowerTDFN, 5 Leads.