на замовлення 1433 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 35.10 грн |
| 12+ | 28.43 грн |
| 100+ | 16.85 грн |
| 500+ | 12.14 грн |
| 1000+ | 9.56 грн |
| 1500+ | 7.95 грн |
| 3000+ | 7.50 грн |
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Технічний опис NTMFS4C10NCT1G onsemi
Description: NFET SO8FL 30V 46A 6.96MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc), Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V.
Інші пропозиції NTMFS4C10NCT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NTMFS4C10NCT1G | Виробник : onsemi |
 Description: NFET SO8FL 30V 46A 6.96MOPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc) Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
товару немає в наявності |
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NTMFS4C10NCT1G | Виробник : onsemi |
Description: NFET SO8FL 30V 46A 6.96MO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 46A (Tc) Power Dissipation (Max): 2.49W (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
товару немає в наявності |