NTMFS4C302NT3G

NTMFS4C302NT3G ON Semiconductor


ntmfs4c302n-d.pdf Виробник: ON Semiconductor
Trans MOSFET N-CH 30V 41A 5-Pin SO-FL EP T/R
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Технічний опис NTMFS4C302NT3G ON Semiconductor

Description: NFET SO8FL 30V 1.15MO, Packaging: Tray, Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 230A (Tc), Rds On (Max) @ Id, Vgs: 1.15mOhm @ 30A, 10V, Power Dissipation (Max): 3.13W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5780 pF @ 15 V.

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NTMFS4C302NT3G NTMFS4C302NT3G Виробник : onsemi ntmfs4c302n-d.pdf Description: NFET SO8FL 30V 1.15MO
Packaging: Tray
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5780 pF @ 15 V
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NTMFS4C302NT3G NTMFS4C302NT3G Виробник : onsemi NTMFS4C302N_D-2318951.pdf MOSFET NFET SO8FL 30V 1.15MO
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