NTMFS5C604NLT1G onsemi
Виробник: onsemi
Description: MOSFET N-CH 60V 38A 5DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
FET Type: N-Channel
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Технічний опис NTMFS5C604NLT1G onsemi
Description: ONSEMI - NTMFS5C604NLT1G - Leistungs-MOSFET, n-Kanal, 60 V, 276 A, 930 µohm, DFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 276A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2V, euEccn: NLR, Verlustleistung: 3.2W, Bauform - Transistor: DFN, Anzahl der Pins: 5Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 930µohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції NTMFS5C604NLT1G за ціною від 83.74 грн до 256.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NTMFS5C604NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 203A Power dissipation: 100W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 837 шт: термін постачання 14-30 дні (днів) |
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NTMFS5C604NLT1G | onsemi |
Description: MOSFET N-CH 60V 38A 5DFN Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 4829 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C604NLT1G | onsemi |
MOSFETs NFET SO8FL 60V 289A 1.2MO |
на замовлення 9345 шт: термін постачання 21-30 дні (днів) |
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NTMFS5C604NLT1G | ONSEMI |
Description: ONSEMI - NTMFS5C604NLT1G - Leistungs-MOSFET, n-Kanal, 60 V, 276 A, 930 µohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 276A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 3.2W Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 930µohm SVHC: Lead (25-Jun-2025) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| NTMFS5C604NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 203A
Power dissipation: 100W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 203A
Power dissipation: 100W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 837 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 165.19 грн |
| 10+ | 130.17 грн |
| 100+ | 91.20 грн |
| 500+ | 83.74 грн |
| NTMFS5C604NLT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 38A 5DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 60V 38A 5DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 4829 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 216.20 грн |
| 10+ | 148.12 грн |
| 100+ | 103.91 грн |
| 500+ | 95.74 грн |
| NTMFS5C604NLT1G |
|
Виробник: onsemi
MOSFETs NFET SO8FL 60V 289A 1.2MO
MOSFETs NFET SO8FL 60V 289A 1.2MO
на замовлення 9345 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 256.35 грн |
| 10+ | 175.06 грн |
| 100+ | 111.59 грн |
| 500+ | 97.81 грн |
| NTMFS5C604NLT1G |
|
Виробник: ONSEMI
Description: ONSEMI - NTMFS5C604NLT1G - Leistungs-MOSFET, n-Kanal, 60 V, 276 A, 930 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 276A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 3.2W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 930µohm
SVHC: Lead (25-Jun-2025)
Description: ONSEMI - NTMFS5C604NLT1G - Leistungs-MOSFET, n-Kanal, 60 V, 276 A, 930 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 276A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 3.2W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 930µohm
SVHC: Lead (25-Jun-2025)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)