NTMFS5C612NT1G-TE onsemi
Виробник: onsemi
Description: MOSFET N-CH 60V 35A/230A 5DFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 1+ | 378.23 грн |
| 10+ | 305.81 грн |
| 100+ | 247.36 грн |
| 500+ | 206.35 грн |
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Технічний опис NTMFS5C612NT1G-TE onsemi
Description: MOSFET N-CH 60V 35A/230A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 170W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Інші пропозиції NTMFS5C612NT1G-TE
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
NTMFS5C612NT1G-TE | onsemi |
Description: MOSFET N-CH 60V 35A/230A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
 |
NTMFS5C612NT1G-TE | onsemi |
MOSFET NFET SO8FL 60V 235A 1.5MO |
товару немає в наявності |
В кошику од. на суму грн. |
| NTMFS5C612NT1G-TE |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 35A/230A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 35A/230A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NTMFS5C612NT1G-TE |
|
Виробник: onsemi
MOSFET NFET SO8FL 60V 235A 1.5MO
MOSFET NFET SO8FL 60V 235A 1.5MO
товару немає в наявності
В кошику
од. на суму грн.