Технічний опис NTMFS5C670NT1G ON Semiconductor
Description: MOSFET N-CH 60V 17A/71A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V, Power Dissipation (Max): 3.6W (Ta), 61W (Tc), Vgs(th) (Max) @ Id: 4V @ 53µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V.
Інші пропозиції NTMFS5C670NT1G
Фото | Назва | Виробник | Інформація |
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Ціна |
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NTMFS5C670NT1G | Виробник : ON Semiconductor |
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NTMFS5C670NT1G | Виробник : onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V |
товару немає в наявності |
|
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NTMFS5C670NT1G | Виробник : onsemi |
![]() |
товару немає в наявності |