| Кількість | Ціна |
|---|---|
| 4+ | 93.74 грн |
| 10+ | 68.65 грн |
| 25+ | 59.28 грн |
| 100+ | 47.29 грн |
| 250+ | 47.15 грн |
| 500+ | 42.01 грн |
| 1000+ | 41.94 грн |
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Технічний опис NTMFS6D1N08HT1G onsemi
Description: MOSFET N-CH 80V 17A/89A 5DFN, Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 120µA, Power Dissipation (Max): 3.8W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Інші пропозиції NTMFS6D1N08HT1G за ціною від 61.05 грн до 146.69 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NTMFS6D1N08HT1G | onsemi |
 Description: MOSFET N-CH 80V 17A/89A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 120µA Power Dissipation (Max): 3.8W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 492 шт: термін постачання 21-31 дні (днів) |
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| NTMFS6D1N08HT1G | ON Semiconductor |
|
на замовлення 880 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| NTMFS6D1N08HT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 17A/89A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 17A/89A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 146.69 грн |
| 10+ | 90.10 грн |
| 100+ | 61.05 грн |
| NTMFS6D1N08HT1G |
|
Виробник: ON Semiconductor
на замовлення 880 шт:
термін постачання 14-28 дні (днів)