NTMFS6H800NT1G onsemi
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
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Технічний опис NTMFS6H800NT1G onsemi
Description: ONSEMI - NTMFS6H800NT1G - Leistungs-MOSFET, n-Kanal, 80 V, 203 A, 1800 µohm, DFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 203A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 200W, Bauform - Transistor: DFN, Anzahl der Pins: 5Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 1800µohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції NTMFS6H800NT1G за ціною від 98.68 грн до 320.70 грн
| Фото | Назва | Виробник | Інформація |
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NTMFS6H800NT1G | onsemi |
Description: MOSFET N-CH 80V 28A/203A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 330µA Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 2368 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H800NT1G | onsemi |
MOSFETs TRENCH 8 80V NFET POWER MOSFET |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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NTMFS6H800NT1G | ONSEMI |
Description: ONSEMI - NTMFS6H800NT1G - Leistungs-MOSFET, n-Kanal, 80 V, 203 A, 1800 µohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 203A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 1800µohm SVHC: Lead (25-Jun-2025) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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NTMFS6H800NT1G | ONSEMI |
Description: ONSEMI - NTMFS6H800NT1G - Leistungs-MOSFET, n-Kanal, 80 V, 203 A, 1800 µohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 203A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 1800µohm SVHC: Lead (25-Jun-2025) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. |
| NTMFS6H800NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 330µA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 28A/203A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 330µA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 2368 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 214.88 грн |
| 10+ | 165.01 грн |
| 100+ | 117.58 грн |
| 500+ | 102.06 грн |
| NTMFS6H800NT1G |
|
Виробник: onsemi
MOSFETs TRENCH 8 80V NFET POWER MOSFET
MOSFETs TRENCH 8 80V NFET POWER MOSFET
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 320.70 грн |
| 10+ | 207.50 грн |
| 100+ | 140.97 грн |
| 500+ | 114.18 грн |
| 1000+ | 98.68 грн |
| NTMFS6H800NT1G |
|
Виробник: ONSEMI
Description: ONSEMI - NTMFS6H800NT1G - Leistungs-MOSFET, n-Kanal, 80 V, 203 A, 1800 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 203A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: Lead (25-Jun-2025)
Description: ONSEMI - NTMFS6H800NT1G - Leistungs-MOSFET, n-Kanal, 80 V, 203 A, 1800 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 203A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: Lead (25-Jun-2025)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| NTMFS6H800NT1G |
|
Виробник: ONSEMI
Description: ONSEMI - NTMFS6H800NT1G - Leistungs-MOSFET, n-Kanal, 80 V, 203 A, 1800 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 203A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: Lead (25-Jun-2025)
Description: ONSEMI - NTMFS6H800NT1G - Leistungs-MOSFET, n-Kanal, 80 V, 203 A, 1800 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 203A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 1800µohm
SVHC: Lead (25-Jun-2025)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)