NTMFSC011N08M7 onsemi
Виробник: onsemiDescription: MV7 80V SG 10MOHM PQFN56DC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 120µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 157.57 грн |
| 10+ | 97.25 грн |
| 100+ | 65.92 грн |
| 500+ | 49.28 грн |
| 1000+ | 45.23 грн |
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Технічний опис NTMFSC011N08M7 onsemi
Description: MV7 80V SG 10MOHM PQFN56DC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 120µA, Supplier Device Package: 8-DFN (5x6.15), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V.
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| NTMFSC011N08M7 | Виробник : ON Semiconductor |
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NTMFSC011N08M7 | Виробник : onsemi |
Description: MV7 80V SG 10MOHM PQFN56DC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Power Dissipation (Max): 3.3W (Ta), 78.1W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 120µA Supplier Device Package: 8-DFN (5x6.15) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V |
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| NTMFSC011N08M7 | Виробник : onsemi |
MOSFETs MV7 80V SG 10MOHM PQFN56DC |
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