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NTMFSCH0D4N04XMTWG

NTMFSCH0D4N04XMTWG onsemi

ntmfsch0d4n04xm-d.pdf
Виробник: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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Технічний опис NTMFSCH0D4N04XMTWG onsemi

Description: MOSFET - POWER, SINGLEN-CHANNEL,, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 3.5V @ 350µA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 529A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).

Інші пропозиції NTMFSCH0D4N04XMTWG

Фото Назва Виробник Інформація Доступність Ціна
NTMFSCH0D4N04XMTWG NTMFSCH0D4N04XMTWG onsemi ntmfsch0d4n04xm-d.pdf Description: MOSFET - POWER, SINGLEN-CHANNEL,
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
товару немає в наявності
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NTMFSCH0D4N04XMTWG NTMFSCH0D4N04XMTWG onsemi ntmfsch0d4n04xm-d.pdf MOSFETs MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6, 40 V, 0.40 mohm, 529 A
товару немає в наявності
 Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
NTMFSCH0D4N04XMTWG ntmfsch0d4n04xm-d.pdf
NTMFSCH0D4N04XMTWG
Виробник: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
товару немає в наявності
В кошику  од. на суму  грн.
NTMFSCH0D4N04XMTWG ntmfsch0d4n04xm-d.pdf
NTMFSCH0D4N04XMTWG
Виробник: onsemi
MOSFETs MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6, 40 V, 0.40 mohm, 529 A
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.