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NTMJS0D7N03CGTWG ONSEMI

Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 188W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 410A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK8
On-state resistance: 0.65mΩ

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Мінімальне замовлення: 3000 шт

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Технічний опис NTMJS0D7N03CGTWG ONSEMI

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8, Mounting: SMD, Pulsed drain current: 900A, Power dissipation: 188W, Gate charge: 147nC, Polarisation: unipolar, Drain current: 410A, Kind of channel: enhancement, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: LFPAK8, On-state resistance: 0.65mΩ.