NTMTS002N08MC onsemi
Виробник: onsemi
Description: PTNG 80V IN CEBU PQFN88
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 540µA
Power Dissipation (Max): 3.3W (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Технічний опис NTMTS002N08MC onsemi
Description: PTNG 80V IN CEBU PQFN88, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-DFNW (8.3x8.4), Vgs(th) (Max) @ Id: 4V @ 540µA, Power Dissipation (Max): 3.3W (Ta), Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції NTMTS002N08MC за ціною від 231.35 грн до 477.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NTMTS002N08MC | onsemi |
Description: PTNG 80V IN CEBU PQFN88 Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 4V @ 540µA Power Dissipation (Max): 3.3W (Ta) |
на замовлення 23900 шт: термін постачання 21-31 дні (днів) |
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| NTMTS002N08MC |
|
Виробник: onsemi
Description: PTNG 80V IN CEBU PQFN88
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 540µA
Power Dissipation (Max): 3.3W (Ta)
Description: PTNG 80V IN CEBU PQFN88
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 4V @ 540µA
Power Dissipation (Max): 3.3W (Ta)
на замовлення 23900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 477.34 грн |
| 10+ | 310.39 грн |
| 100+ | 231.35 грн |