NTMTS0D4N04CLTXG onsemi
Виробник: onsemi
Description: MOSFET N-CH 40V 79.8A 8DFNW
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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Технічний опис NTMTS0D4N04CLTXG onsemi
Description: MOSFET N-CH 40V 79.8A 8DFNW, Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-DFNW (8.3x8.4), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5W (Ta), 244W (Tc), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN.
Інші пропозиції NTMTS0D4N04CLTXG за ціною від 143.74 грн до 375.85 грн
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NTMTS0D4N04CLTXG | onsemi |
Description: MOSFET N-CH 40V 79.8A 8DFNW Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Ta), 244W (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
на замовлення 3339 шт: термін постачання 21-31 дні (днів) |
|
| NTMTS0D4N04CLTXG |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 79.8A 8DFNW
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: MOSFET N-CH 40V 79.8A 8DFNW
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
на замовлення 3339 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 375.85 грн |
| 10+ | 240.37 грн |
| 100+ | 171.64 грн |
| 500+ | 143.74 грн |