| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 604.77 грн |
| 10+ | 419.63 грн |
| 100+ | 294.92 грн |
| 500+ | 261.82 грн |
| 1000+ | 232.48 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
31-40 дні (днів)
Відгуки про товар
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Технічний опис NTMTS1D2N08H onsemi
Description: T8-80V IN PQFN88 FOR INDU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V, Power Dissipation (Max): 5W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 590µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V.
Інші пропозиції NTMTS1D2N08H
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NTMTS1D2N08H | onsemi |
 Description: T8-80V IN PQFN88 FOR INDUPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
NTMTS1D2N08H | onsemi |
Description: T8-80V IN PQFN88 FOR INDU Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. |
| NTMTS1D2N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8 Pulsed drain current: 900A Power dissipation: 150W Gate charge: 147nC Polarisation: unipolar Drain current: 335A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFNW8 On-state resistance: 1.1mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
 |
NTMTS1D2N08H | ON Semiconductor |
Single N-Channel Power MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| NTMTS1D2N08H |
|
Виробник: onsemi
Description: T8-80V IN PQFN88 FOR INDU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Description: T8-80V IN PQFN88 FOR INDU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMTS1D2N08H |
|
Виробник: onsemi
Description: T8-80V IN PQFN88 FOR INDU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Description: T8-80V IN PQFN88 FOR INDU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMTS1D2N08H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Pulsed drain current: 900A
Power dissipation: 150W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 335A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFNW8
On-state resistance: 1.1mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Pulsed drain current: 900A
Power dissipation: 150W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 335A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFNW8
On-state resistance: 1.1mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMTS1D2N08H |
|
Виробник: ON Semiconductor
Single N-Channel Power MOSFET
Single N-Channel Power MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.