на замовлення 5955 шт:
термін постачання 532-541 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.59 грн |
| 10+ | 220 грн |
| 25+ | 180.68 грн |
| 100+ | 154.77 грн |
| 250+ | 146.14 грн |
| 500+ | 137.5 грн |
| 1000+ | 118.24 грн |
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Технічний опис NTMYS025N06CLTWG onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V, Power Dissipation (Max): 3.8W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2V @ 13µA, Supplier Device Package: LFPAK4 (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.
Інші пропозиції NTMYS025N06CLTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
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NTMYS025N06CLTWG | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 60V 8.5A 5-Pin(4+Tab) LFPAK T/R |
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NTMYS025N06CLTWG | Виробник : onsemi |
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.8W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
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NTMYS025N06CLTWG | Виробник : onsemi |
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.8W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2V @ 13µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
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