Технічний опис NTMYS1D2N04CLTWG ON Semiconductor
Description: MOSFET N-CH 40V 44A/258A LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 134W (Tc), Vgs(th) (Max) @ Id: 2V @ 180µA, Supplier Device Package: LFPAK4 (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V.
Інші пропозиції NTMYS1D2N04CLTWG
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NTMYS1D2N04CLTWG | Виробник : onsemi |
 Description: MOSFET N-CH 40V 44A/258A LFPAK4Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 134W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V |
товару немає в наявності |
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NTMYS1D2N04CLTWG | Виробник : onsemi |
Description: MOSFET N-CH 40V 44A/258A LFPAK4 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 258A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 134W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V |
товару немає в наявності |
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NTMYS1D2N04CLTWG | Виробник : onsemi |
MOSFET T6 40V LL LFPAK |
товару немає в наявності |
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| NTMYS1D2N04CLTWG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 258A; Idm: 900A; 67W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 258A Pulsed drain current: 900A Power dissipation: 67W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |