| Кількість | Ціна |
|---|---|
| 3+ | 139.48 грн |
| 10+ | 107.56 грн |
| 25+ | 92.13 грн |
| 100+ | 66.74 грн |
| 500+ | 54.57 грн |
| 1000+ | 52.18 грн |
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Технічний опис NTMYS7D3N04CLTWG onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 2V @ 30µA, Power Dissipation (Max): 3.8W (Ta), 38W (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR).
Інші пропозиції NTMYS7D3N04CLTWG за ціною від 46.69 грн до 162.19 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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NTMYS7D3N04CLTWG | onsemi |
 Description: MOSFET N-CH 40V 17A/52A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
на замовлення 1261 шт: термін постачання 21-31 дні (днів) |
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| NTMYS7D3N04CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET N-CH 40V 17A/52A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
на замовлення 1261 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 162.19 грн |
| 10+ | 99.96 грн |
| 100+ | 67.90 грн |
| 500+ | 50.83 грн |
| 1000+ | 46.69 грн |