NTP165N65S3H ONSEMI
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна |
|---|---|
| 2+ | 235.34 грн |
| 10+ | 211.81 грн |
| 50+ | 200.04 грн |
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Технічний опис NTP165N65S3H ONSEMI
Description: POWER MOSFET, N-CHANNEL, SUPERFE, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.6mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 400 V.
Інші пропозиції NTP165N65S3H за ціною від 127.07 грн до 366.59 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NTP165N65S3H | onsemi |
Description: POWER MOSFET, N-CHANNEL, SUPERFE Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.6mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 400 V |
на замовлення 733 шт: термін постачання 21-31 дні (днів) |
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NTP165N65S3H | onsemi |
MOSFETs SUPERFET3 FAST 165MOHM TO-220 |
на замовлення 1457 шт: термін постачання 21-30 дні (днів) |
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| NTP165N65S3H |
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Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 400 V
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 400 V
на замовлення 733 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 355.86 грн |
| 50+ | 178.89 грн |
| 100+ | 163.08 грн |
| 500+ | 127.07 грн |
| NTP165N65S3H |
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Виробник: onsemi
MOSFETs SUPERFET3 FAST 165MOHM TO-220
MOSFETs SUPERFET3 FAST 165MOHM TO-220
на замовлення 1457 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 366.59 грн |
| 10+ | 192.72 грн |
| 100+ | 152.22 грн |
| 500+ | 138.96 грн |