Технічний опис NTP4813NLG ON Semiconductor
Description: MOSFET N-CH 30V 10.2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), Rds On (Max) @ Id, Vgs: 13.1mOhm @ 20A, 10V, Power Dissipation (Max): 2.4W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 11.5 V, Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 12 V.
Інші пропозиції NTP4813NLG
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NTP4813NLG | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 12 V |
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