NTR0202PLT1G onsemi
Виробник: onsemi
Description: MOSFET P-CH 20V 400MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 8.09 грн |
| 6000+ | 7.47 грн |
| 9000+ | 6.72 грн |
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Технічний опис NTR0202PLT1G onsemi
Description: MOSFET P-CH 20V 400MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V, Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 225mW (Ta), Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції NTR0202PLT1G за ціною від 4.04 грн до 41.69 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NTR0202PLT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.4A Gate charge: 2.18nC Power dissipation: 0.225W On-state resistance: 0.55Ω Gate-source voltage: ±20V Kind of package: reel; tape |
на замовлення 576 шт: термін постачання 14-30 дні (днів) |
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NTR0202PLT1G | onsemi |
Description: MOSFET P-CH 20V 400MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 18079 шт: термін постачання 21-31 дні (днів) |
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NTR0202PLT1G | onsemi |
MOSFETs -20V -400mA P-Channel |
на замовлення 64832 шт: термін постачання 21-30 дні (днів) |
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| NTR0202PLT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
на замовлення 576 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 46+ | 10.05 грн |
| 63+ | 6.79 грн |
| 83+ | 5.16 грн |
| 100+ | 4.69 грн |
| 250+ | 4.29 грн |
| 500+ | 4.04 грн |
| NTR0202PLT1G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 400MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 400MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 2.18 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 18079 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.13 грн |
| 14+ | 22.45 грн |
| 100+ | 13.44 грн |
| 500+ | 11.68 грн |
| 1000+ | 7.94 грн |
| NTR0202PLT1G |
![]() |
Виробник: onsemi
MOSFETs -20V -400mA P-Channel
MOSFETs -20V -400mA P-Channel
на замовлення 64832 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 41.69 грн |
| 14+ | 24.88 грн |
| 100+ | 13.81 грн |
| 500+ | 10.64 грн |
| 1000+ | 9.52 грн |
| 3000+ | 7.54 грн |




