Технічний опис NTS4101PT1 ON
Description: MOSFET P-CH 20V 1.37A SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V, Power Dissipation (Max): 329mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SC-70-3 (SOT323), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V.
Інші пропозиції NTS4101PT1
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NTS4101PT1 | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V Power Dissipation (Max): 329mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V |
товару немає в наявності |
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![]() |
NTS4101PT1 | Виробник : onsemi |
![]() |
товару немає в наявності |