NTTBC070NP10M5L onsemi
Виробник: onsemiDescription: MOSFET N/P-CH 100V 3.5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA
Supplier Device Package: 8-WDFN (3x3)
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 33.14 грн |
| 6000+ | 29.87 грн |
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Технічний опис NTTBC070NP10M5L onsemi
Description: MOSFET N/P-CH 100V 3.5A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V, Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA, Supplier Device Package: 8-WDFN (3x3).
Інші пропозиції NTTBC070NP10M5L за ціною від 34.08 грн до 124.15 грн
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NTTBC070NP10M5L | Виробник : onsemi |
Description: MOSFET N/P-CH 100V 3.5A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA Supplier Device Package: 8-WDFN (3x3) |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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| NTTBC070NP10M5L | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 100/-100V Drain current: 9.5/-5A Pulsed drain current: 33A Power dissipation: 14/10W Gate-source voltage: ±20V On-state resistance: 70/186mΩ Mounting: SMD Gate charge: 5.6/7.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 3000 шт |
товару немає в наявності |
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| NTTBC070NP10M5L | Виробник : onsemi |
MOSFET MV5_100V_N_P_IN DUALS AND SINGLE |
товару немає в наявності |
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| NTTBC070NP10M5L | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100/-100V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 100/-100V Drain current: 9.5/-5A Pulsed drain current: 33A Power dissipation: 14/10W Gate-source voltage: ±20V On-state resistance: 70/186mΩ Mounting: SMD Gate charge: 5.6/7.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |