NTTFD018N08LC onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 80V 6A 12WQFN
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Tape & Reel (TR)
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Технічний опис NTTFD018N08LC onsemi
Description: MOSFET 2N-CH 80V 6A 12WQFN, Supplier Device Package: 12-WQFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.5V @ 44µA, Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V, Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc), Drain to Source Voltage (Vdss): 80V, Power - Max: 1.7W (Ta), 26W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 12-PowerWQFN, Packaging: Tape & Reel (TR).
Інші пропозиції NTTFD018N08LC за ціною від 110.37 грн до 291.00 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NTTFD018N08LC | onsemi |
Description: MOSFET 2N-CH 80V 6A 12WQFNSupplier Device Package: 12-WQFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.5V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Drain to Source Voltage (Vdss): 80V Power - Max: 1.7W (Ta), 26W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Packaging: Cut Tape (CT) |
на замовлення 110895 шт: термін постачання 21-31 дні (днів) |
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| NTTFD018N08LC | ONN |
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на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| NTTFD018N08LC |
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Виробник: onsemi
Description: MOSFET 2N-CH 80V 6A 12WQFN
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 80V 6A 12WQFN
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Cut Tape (CT)
на замовлення 110895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 291.00 грн |
| 10+ | 184.02 грн |
| 100+ | 129.68 грн |
| 500+ | 110.37 грн |
| NTTFD018N08LC |
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Виробник: ONN
на замовлення 3000 шт:
термін постачання 14-28 дні (днів)

