NTTFD4D1N03P1E onsemi
Виробник: onsemi
Description: FET 30V 4.1MOHM PC33 DUAL SYMM
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 270µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Description: FET 30V 4.1MOHM PC33 DUAL SYMM
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 270µA
Supplier Device Package: 12-WQFN (3.3x3.3)
на замовлення 2809 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 100.6 грн |
10+ | 79.23 грн |
100+ | 61.62 грн |
500+ | 49.02 грн |
1000+ | 39.93 грн |
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Технічний опис NTTFD4D1N03P1E onsemi
Description: FET 30V 4.1MOHM PC33 DUAL SYMM, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), 20W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 270µA, Supplier Device Package: 12-WQFN (3.3x3.3).
Інші пропозиції NTTFD4D1N03P1E
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
NTTFD4D1N03P1E | Виробник : onsemi |
Description: FET 30V 4.1MOHM PC33 DUAL SYMM Packaging: Tape & Reel (TR) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 270µA Supplier Device Package: 12-WQFN (3.3x3.3) |
товар відсутній |
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NTTFD4D1N03P1E | Виробник : onsemi | MOSFET FET 30V 4.1MOHM PC33 DUAL SYMM |
товар відсутній |