NTTFD4D1N03P1E onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A 12WQFN
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W (Ta), 20W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 40.64 грн |
| 6000+ | 38.16 грн |
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Технічний опис NTTFD4D1N03P1E onsemi
Description: MOSFET 2N-CH 30V 12A 12WQFN, Supplier Device Package: 12-WQFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 270µA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 1W (Ta), 20W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 12-PowerWQFN, Packaging: Tape & Reel (TR).
Інші пропозиції NTTFD4D1N03P1E за ціною від 41.52 грн до 146.69 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NTTFD4D1N03P1E | onsemi |
Description: MOSFET 2N-CH 30V 12A 12WQFN Packaging: Cut Tape (CT) Supplier Device Package: 12-WQFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1W (Ta), 20W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN |
на замовлення 20516 шт: термін постачання 21-31 дні (днів) |
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| NTTFD4D1N03P1E |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 12A 12WQFN
Packaging: Cut Tape (CT)
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W (Ta), 20W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Description: MOSFET 2N-CH 30V 12A 12WQFN
Packaging: Cut Tape (CT)
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W (Ta), 20W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
на замовлення 20516 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 146.69 грн |
| 10+ | 90.02 грн |
| 100+ | 60.77 грн |
| 500+ | 45.29 грн |
| 1000+ | 41.52 грн |