| Кількість | Ціна |
|---|---|
| 2+ | 199.00 грн |
| 10+ | 127.26 грн |
| 100+ | 76.12 грн |
| 500+ | 62.45 грн |
| 1000+ | 61.81 грн |
| 3000+ | 58.92 грн |
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Технічний опис NTTFD9D0N06HLTWG onsemi
Description: MOSFET, POWER, 60V POWERTRENCH P, Part Status: Active, Supplier Device Package: 12-WQFN (3.3x3.3), Vgs(th) (Max) @ Id: 2V @ 50µA, Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V, Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 1.7W (Ta), 26W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 12-PowerWQFN, Packaging: Tape & Reel (TR).
Інші пропозиції NTTFD9D0N06HLTWG за ціною від 96.26 грн до 224.40 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTTFD9D0N06HLTWG | onsemi |
 Description: MOSFET, POWER, 60V POWERTRENCH PPart Status: Active Supplier Device Package: 12-WQFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 1.7W (Ta), 26W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Packaging: Cut Tape (CT) |
на замовлення 2984 шт: термін постачання 21-31 дні (днів) |
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| NTTFD9D0N06HLTWG |
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Виробник: onsemi
Description: MOSFET, POWER, 60V POWERTRENCH P
Part Status: Active
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Cut Tape (CT)
Description: MOSFET, POWER, 60V POWERTRENCH P
Part Status: Active
Supplier Device Package: 12-WQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 948pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 38A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.7W (Ta), 26W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Packaging: Cut Tape (CT)
на замовлення 2984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 224.40 грн |
| 10+ | 179.51 грн |
| 100+ | 142.86 грн |
| 500+ | 113.45 грн |
| 1000+ | 96.26 грн |