на замовлення 4500 шт:
термін постачання 133-142 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.33 грн |
| 10+ | 84.24 грн |
| 100+ | 56.47 грн |
| 500+ | 47.88 грн |
| 1000+ | 39.02 грн |
| 1500+ | 36.69 грн |
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Технічний опис NTTFS004N04CTAG onsemi
Description: MOSFET N-CH 40V 18A/77A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V, Power Dissipation (Max): 3.2W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V.
Інші пропозиції NTTFS004N04CTAG
| Фото | Назва | Виробник | Інформація |
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NTTFS004N04CTAG | Виробник : onsemi |
 Description: MOSFET N-CH 40V 18A/77A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V |
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NTTFS004N04CTAG | Виробник : onsemi |
Description: MOSFET N-CH 40V 18A/77A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V |
товар відсутній |