NTTFS030N06CTAG onsemi
Виробник: onsemiDescription: MOSFET N-CH 60V 6A/19A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V
на замовлення 28500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 10.91 грн |
| 3000+ | 9.84 грн |
| 4500+ | 9.69 грн |
| 7500+ | 8.80 грн |
| 10500+ | 8.26 грн |
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Технічний опис NTTFS030N06CTAG onsemi
Description: MOSFET N-CH 60V 6A/19A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V, Power Dissipation (Max): 2.5W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 4V @ 13µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V.
Інші пропозиції NTTFS030N06CTAG за ціною від 8.53 грн до 45.71 грн
| Фото | Назва | Виробник | Інформація |
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NTTFS030N06CTAG | Виробник : onsemi |
MOSFETs Single N-Channel Power MOSFET 60V, 27A, 29.7m?ohm in u8FL |
на замовлення 844 шт: термін постачання 21-30 дні (днів) |
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NTTFS030N06CTAG | Виробник : onsemi |
Description: MOSFET N-CH 60V 6A/19A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V |
на замовлення 28500 шт: термін постачання 21-31 дні (днів) |
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| NTTFS030N06CTAG | Виробник : ON Semiconductor |
Single N Channel Power MOSFET 60V, 27A, 29.7m |
товару немає в наявності |
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| NTTFS030N06CTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1500 шт |
товару немає в наявності |
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| NTTFS030N06CTAG | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |