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NTTFS4941NTAG

NTTFS4941NTAG onsemi

nttfs4941n-d.pdf Виробник: onsemi
Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
410+49.65 грн
Мінімальне замовлення: 410
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Технічний опис NTTFS4941NTAG onsemi

Description: MOSFET N-CH 30V 8.3A/46A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V, Power Dissipation (Max): 840mW (Ta), 25.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V.

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NTTFS4941NTAG NTTFS4941NTAG Виробник : onsemi nttfs4941n-d.pdf Description: MOSFET N-CH 30V 8.3A/46A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 15 V
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