| Кількість | Ціна |
|---|---|
| 8+ | 44.15 грн |
| 10+ | 33.00 грн |
| 100+ | 19.97 грн |
| 500+ | 16.13 грн |
| 1000+ | 16.06 грн |
| 1500+ | 12.22 грн |
| 3000+ | 10.06 грн |
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Технічний опис NTTFS4C05NTAG onsemi
Description: MOSFET N-CH 30V 12A/75A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 820mW (Ta), 33W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Інші пропозиції NTTFS4C05NTAG за ціною від 25.97 грн до 86.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTTFS4C05NTAG | onsemi |
 Description: MOSFET N-CH 30V 12A/75A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V Power Dissipation (Max): 820mW (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V |
на замовлення 709 шт: термін постачання 21-31 дні (днів) |
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| NTTFS4C05NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 12A/75A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 820mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V
Description: MOSFET N-CH 30V 12A/75A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 820mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V
на замовлення 709 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 86.41 грн |
| 10+ | 52.27 грн |
| 100+ | 35.09 грн |
| 500+ | 25.97 грн |