| Кількість | Ціна |
|---|---|
| 5+ | 69.57 грн |
| 10+ | 56.41 грн |
| 100+ | 38.13 грн |
| 500+ | 32.28 грн |
| 1000+ | 24.81 грн |
| 5000+ | 23.54 грн |
| 10000+ | 23.40 грн |
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Технічний опис NTTFS4C10NTWG onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 790mW (Ta), 23.6W (Tc), Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V.
Інші пропозиції NTTFS4C10NTWG за ціною від 43.53 грн до 107.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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NTTFS4C10NTWG | onsemi |
 Description: MOSFET N-CH 30V 8.2A/44A 8WDFNInput Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 790mW (Ta), 23.6W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 405 шт: термін постачання 21-31 дні (днів) |
|
| NTTFS4C10NTWG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 405 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.84 грн |
| 10+ | 65.51 грн |
| 100+ | 43.53 грн |