NTTFS5116PLTWG onsemi

Description: MOSFET P-CH 60V 5.7A 8WDFN, Power Dissipation (Max): 3.2W (Ta), 40W (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 3V @ 250µA.