NTTFS6H854NTAG onsemi
Виробник: onsemi
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V
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Технічний опис NTTFS6H854NTAG onsemi
Description: TRENCH 8 80V NFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 44A (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.2W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 4V @ 45µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 40 V.
Інші пропозиції NTTFS6H854NTAG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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NTTFS6H854NTAG | onsemi |
Description: TRENCH 8 80V NFET Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NTTFS6H854NTAG | onsemi |
MOSFET TRENCH 8 80V NFET |
товару немає в наявності |
В кошику од. на суму грн. |
| NTTFS6H854NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8 Pulsed drain current: 175A Power dissipation: 34W Gate charge: 13nC Polarisation: unipolar Drain current: 44A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 14.5mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| NTTFS6H854NTAG |
|
Виробник: onsemi
MOSFET TRENCH 8 80V NFET
MOSFET TRENCH 8 80V NFET
товару немає в наявності
В кошику
од. на суму грн.
| NTTFS6H854NTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 175A; 34W; WDFN8
Pulsed drain current: 175A
Power dissipation: 34W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 14.5mΩ
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.