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Технічний опис NTTFS8D1N08HTAG onsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8, Mounting: SMD, Pulsed drain current: 216A, Power dissipation: 63W, Gate charge: 23nC, Polarisation: unipolar, Drain current: 61A, Kind of channel: enhancement, Drain-source voltage: 80V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: WDFN8, On-state resistance: 8.3mΩ.
Інші пропозиції NTTFS8D1N08HTAG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| NTTFS8D1N08HTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8 Mounting: SMD Pulsed drain current: 216A Power dissipation: 63W Gate charge: 23nC Polarisation: unipolar Drain current: 61A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 8.3mΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| NTTFS8D1N08HTAG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8
Mounting: SMD
Pulsed drain current: 216A
Power dissipation: 63W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 8.3mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8
Mounting: SMD
Pulsed drain current: 216A
Power dissipation: 63W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 8.3mΩ
товару немає в наявності
В кошику
од. на суму грн.