NTTFSS1D1N02P1E onsemi
Виробник: onsemi
Description: 25V PT11E IN 3X3 SD PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 9-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 934µA
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Tape & Reel (TR)
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Технічний опис NTTFSS1D1N02P1E onsemi
Description: 25V PT11E IN 3X3 SD PACKAGE, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 9-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2V @ 934µA, Power Dissipation (Max): 2W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-PowerWDFN, Packaging: Tape & Reel (TR).
Інші пропозиції NTTFSS1D1N02P1E за ціною від 65.60 грн до 217.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NTTFSS1D1N02P1E | onsemi |
Description: 25V PT11E IN 3X3 SD PACKAGE Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 9-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 2V @ 934µA Power Dissipation (Max): 2W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 5880 шт: термін постачання 21-31 дні (днів) |
|
| NTTFSS1D1N02P1E |
|
Виробник: onsemi
Description: 25V PT11E IN 3X3 SD PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 9-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 934µA
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
Description: 25V PT11E IN 3X3 SD PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 9-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 934µA
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 264A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 5880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 217.26 грн |
| 10+ | 135.53 грн |
| 100+ | 93.60 грн |
| 500+ | 71.01 грн |
| 1000+ | 65.60 грн |