NTZD5110NT1G onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 294mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Технічний опис NTZD5110NT1G onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 294mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 250mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Інші пропозиції NTZD5110NT1G за ціною від 4.48 грн до 30.38 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NTZD5110NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563F Drain current: 0.225A Power dissipation: 0.28W On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
на замовлення 1700 шт: термін постачання 14-30 дні (днів) |
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NTZD5110NT1G | onsemi |
Description: MOSFET 2N-CH 60V 0.294A SOT563 Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Current - Continuous Drain (Id) @ 25°C: 294mA Drain to Source Voltage (Vdss): 60V Power - Max: 250mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 6770 шт: термін постачання 21-31 дні (днів) |
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NTZD5110NT1G | onsemi |
MOSFETs SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH |
на замовлення 2189 шт: термін постачання 21-30 дні (днів) |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 1700 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 23.22 грн |
| 43+ | 9.87 грн |
| 100+ | 7.30 грн |
| 500+ | 6.05 грн |
| 1000+ | 5.64 грн |
| NTZD5110NT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 294mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 0.294A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 294mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 6770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.12 грн |
| 19+ | 16.12 грн |
| 100+ | 10.17 грн |
| 500+ | 7.11 грн |
| 1000+ | 6.33 грн |
| 2000+ | 5.66 грн |
| NTZD5110NT1G |
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Виробник: onsemi
MOSFETs SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH
MOSFETs SMALL SIGNAL MOSFET 60V 310mA DUAL N-CH
на замовлення 2189 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.38 грн |
| 18+ | 18.22 грн |
| 100+ | 9.99 грн |
| 500+ | 7.44 грн |
| 1000+ | 6.61 грн |
| 2000+ | 5.99 грн |
| 4000+ | 4.48 грн |