NVB25P06T4G ON Semiconductor

Description: MOSFET P-CH 60V 27.5A D2PAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 120W (Tj), Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).